| PART |
Description |
Maker |
| MM74C89J MM74C89N MM54C89W MM54C89JB MM54C89B |
MILITARY TEMPERATURE SRAM in a 16-pin ceramic DIP package
|
Rochester Electronics
|
| CM7V03-T1A |
Low Profile SM 32.768Khz Watch Crystal with Military Temperature Range
|
Golledge Electronics Lt...
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| DV200-2800DSERIES |
COTS Converters:Military Designs for Military Applications COTS的转换器：用于军事用途的军事设计
|
Electronic Theatre Controls, Inc.
|
| DVST2800TSERIES |
COTS Converters:Military Designs for Military Applications COTS的转换器：用于军事用途的军事设计
|
Vishay Intertechnology, Inc.
|
| HM62A16100I HM62A16100LBPI-7 HM62A16100LBPI-7SL |
Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit)
Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
Memory>Low Power SRAM
|
Renesas Electronics Corporation
|
| R1LV0416C-I R1LV0416CSB-5SI R1LV0416CSB-7LI |
Memory>Low Power SRAM
Wide Temperature Range Version 4M SRAM (256-kword 】 16-bit)
Wide Temperature Range Version 4M SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
| CY7C1367C-166BGC CY7C1366C-200BZI CY7C1366C-200BZC |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PBGA119
Low Cost, Single, 300 MHz Voltage Feedback Amplifier; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 256K X 36 CACHE SRAM, 3 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| HM62V8100LBPI-5SL HM62V8100LTTI-5SL HM62V8100I |
Wide Temperature Range Version 8 M SRAM (1024-kword 8-bit) 宽温版本八米的SRAM1024 - KWord的？8位）
Wide Temperature Range Version 8 M SRAM (1024-kword ′ 8-bit)
|
Renesas Electronics, Corp.
Renesas Electronics Corporation.
|
| 5962-9458101MCA |
Quad Low Power, High Speed JFET Operational Amplifier; Package: CERDIP GLASS SEAL; No of Pins: 14; Temperature Range: Military QUAD OP-AMP, 4000 uV OFFSET-MAX, 4 MHz BAND WIDTH, CDIP14
|
Analog Devices, Inc.
|
| KM681002C KM681002C-10 KM681002C-12 KM681002C-15 K |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAM5V工作。在经营商业和工业温度范围
128K X 8 STANDARD SRAM, 20 ns, PDSO32
128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| CY7C1483V33-100BGC CY7C1483V33-117BGC CY7C1483V33- |
IC, SDRAM, 64M BIT, 512KX4X32 BIT,3.3V,10NS,100MHZ,TSOP-86
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 7.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PBGA165
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 6.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 2M X 36 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 5.5 ns, PBGA209
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
